Effect of two bands on critical fields in MgB2 thin films with various resistivity values -: art. no. 094517

被引:63
作者
Ferrando, V
Manfrinetti, P
Marré, D
Putti, M
Sheikin, I
Tarantini, C
Ferdeghini, C
机构
[1] Univ Genoa, Dipartimento Fis, INFM, LAMIA, I-16146 Genoa, Italy
[2] Univ Genoa, Dipartimento Chim & Chim Ind, INFM, LAMIA, I-16146 Genoa, Italy
[3] Max Planck Inst Festkorperforsch, CNRS, GHMFL, F-38042 Grenoble 9, France
关键词
D O I
10.1103/PhysRevB.68.094517
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Upper critical fields of four MgB2 thin films were measured up to 28 T at Grenoble High Magnetic Field Laboratory. The films were grown by pulsed laser deposition and showed critical temperatures ranging between 29.5 and 38.8 K and resistivities at 40 K varying from 5 to 50 muOmega cm. The critical fields in the perpendicular direction turned out to be in the 13-24 T range while they were estimated to be in 42-57 T range for ab planes. In contrast to the prediction of the BCS theory, we did not observe any saturation at low temperatures: a linear temperature dependence is exhibited even at lowest temperatures at which we made the measurements. Moreover, the critical field values seemed not to depend on the normal state resistivity value. In this paper, we analyze these data considering the multiband nature of superconductivity in MgB2. We will show how the scattering mechanisms that determine critical fields and resistivity can be different.
引用
收藏
页数:6
相关论文
共 28 条
[1]   Temperature and field dependence of the anisotropy of MgB2 -: art. no. 167004 [J].
Angst, M ;
Puzniak, R ;
Wisniewski, A ;
Jun, J ;
Kazakov, SM ;
Karpinski, J ;
Roos, J ;
Keller, H .
PHYSICAL REVIEW LETTERS, 2002, 88 (16) :1670041-1670044
[2]   Growth of strongly biaxially aligned MgB2 thin films on sapphire by postannealing of amorphous precursors [J].
Berenov, A ;
Lockman, Z ;
Qi, X ;
MacManus-Driscoll, JL ;
Bugoslavsky, Y ;
Cohen, LF ;
Jo, MH ;
Stelmashenko, NA ;
Tsaneva, VN ;
Kambara, M ;
Babu, NH ;
Cardwell, DA ;
Blamire, MG .
APPLIED PHYSICS LETTERS, 2001, 79 (24) :4001-4003
[3]   Phenomenological two-gap model for the specific heat of MgB [J].
Bouquet, F ;
Wang, Y ;
Fisher, RA ;
Hinks, DG ;
Jorgensen, JD ;
Junod, A ;
Phillips, NE .
EUROPHYSICS LETTERS, 2001, 56 (06) :856-862
[4]   Multiband model for tunneling in MgB2 junctions -: art. no. 180517 [J].
Brinkman, A ;
Golubov, AA ;
Rogalla, H ;
Dolgov, OV ;
Kortus, J ;
Kong, Y ;
Jepsen, O ;
Andersen, OK .
PHYSICAL REVIEW B, 2002, 65 (18) :1805171-1805174
[5]   Synthesis and properties of c-axis oriented epitaxial MgB2 thin films [J].
Bu, SD ;
Kim, DM ;
Choi, JH ;
Giencke, J ;
Hellstrom, EE ;
Larbalestier, DC ;
Patnaik, S ;
Cooley, L ;
Eom, CB ;
Lettieri, J ;
Schlom, DG ;
Tian, W ;
Pan, XQ .
APPLIED PHYSICS LETTERS, 2002, 81 (10) :1851-1853
[6]   Enhancement of the high-magnetic field critical current density of superconducting MgB2 by proton irradiation [J].
Bugoslavsky, Y ;
Cohen, LF ;
Perkins, GK ;
Polichetti, M ;
Tate, TJ ;
Gwilliam, R ;
Caplin, AD .
NATURE, 2001, 411 (6837) :561-563
[7]   First-principles calculation of the superconducting transition in MgB2 within the anisotropic Eliashberg formalism -: art. no. 020513 [J].
Choi, HJ ;
Roundy, D ;
Sun, H ;
Cohen, ML ;
Louie, SG .
PHYSICAL REVIEW B, 2002, 66 (02) :1-4
[8]   Fermi surface topology and the upper critical field in two-band superconductors:: Application to MgB2 -: art. no. 017001 [J].
Dahm, T ;
Schopohl, N .
PHYSICAL REVIEW LETTERS, 2003, 91 (01)
[9]   Neutron irradiation of MgB2 bulk superconductors [J].
Eisterer, M ;
Zehetmayer, M ;
Tönies, S ;
Weber, HW ;
Kambara, M ;
Babu, NH ;
Cardwell, DA ;
Greenwood, LR .
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2002, 15 (02) :L9-L12
[10]   Growth of c-oriented MgB2 thin films by pulsed laser deposition:: structural characterization and electronic anisotropy [J].
Ferdeghini, C ;
Ferrando, V ;
Grassano, G ;
Ramadan, W ;
Bellingeri, E ;
Braccini, V ;
Marré, D ;
Manfrinetti, P ;
Palenzona, A ;
Borgatti, F ;
Felici, R ;
Lee, TL .
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2001, 14 (11) :952-957