Computationally Efficient, Real-Time, and Embeddable Prognostic Techniques for Power Electronics

被引:81
作者
Alghassi, Alireza [1 ]
Perinpanayagam, Suresh [1 ]
Samie, Mohammad [1 ]
Sreenuch, Tarapong [1 ]
机构
[1] Cranfield Univ, Sch Appl Sci, Integrated Vehicle Hlth Management Ctr, Cranfield MK43 0AL, Beds, England
关键词
Isolated-gate bipolar transistor (IGBT); Monte-Carlo simulation (MCS); power electronics; prognostics; remaining useful life (RUL); RELIABILITY; CONVERTERS; FAILURE; MODEL;
D O I
10.1109/TPEL.2014.2360662
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];
摘要
Power electronics are increasingly important in new generation vehicles as critical safety mechanical subsystems are being replaced with more electronic components. Hence, it is vital that the health of these power electronic components is monitored for safety and reliability on a platform. The aim of this paper is to develop a prognostic approach for predicting the remaining useful life of power electronic components. The developed algorithms must also be embeddable and computationally efficient to support on-board real-time decision making. Current state-of-the-art prognostic algorithms, notably those based on Markov models, are computationally intensive and not applicable to real-time embedded applications. In this paper, an isolated-gate bipolar transistor (IGBT) is used as a case study for prognostic development. The proposed approach is developed by analyzing failure mechanisms and statistics of IGBT degradation data obtained from an accelerated aging experiment. The approach explores various probability distributions for modeling discrete degradation profiles of the IGBT component. This allows the stochastic degradation model to be efficiently simulated, in this particular example similar to 1000 times more efficiently than Markov approaches.
引用
收藏
页码:2623 / 2634
页数:12
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