The influence of Cu doping on opto-electronic properties of chemically deposited CdS

被引：61

作者：

Petre, D ^{[1
]}

Pintilie, I ^{[1
]}

Pentia, E ^{[1
]}

Pintilie, L ^{[1
]}

Botila, T ^{[1
]}

机构：

[1] Natl Inst Mat Phys, RO-76900 Bucharest, Romania

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 58卷 / 03期

关键词：

opto-electronic; chemically deposited CdS; thermally stimulated currents;

D O I：

10.1016/S0921-5107(98)00435-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cadmium sulphide (CdS) thin films were deposited on glass substrate by precipitation from aqueous solution technique. The films were doped with copper using the direct method consisting in the addition of a copper salt (CuCl(2)) in the deposition bath of CdS. The doped films were annealed in air, at 300 degrees C, for 1 h. We report some structural, optical, electrical and photoelectrical properties of CdS thin films before and after Cu doping, correlated with investigation of trapping levels by Thermally Stimulated Currents (TSC) method. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：238 / 243

页数：6

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