Proton-irradiation of Cu(In,Ga)Se2 and CuInS2 thin-film solar cells

被引：12

作者：

Boden, A ^{[1
]}

Braunig, D ^{[1
]}

Klaer, J ^{[1
]}

Karg, FH ^{[1
]}

Hösselbarth, B ^{[1
]}

La Roche, G ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-1000 Berlin, Germany

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916064

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Data of proton irradiated solar cells of the CIS-types (CuInS2 as well as Cu(In,Ga)Se-2) are presented demonstrating the excellent radiation hardness of these thin-film devices against space radiation. Cost and weight considerations and the possible flexible structure are among the interesting points to use these cells as solar generators especially in orbits across the inner Van-Allenbelt. The degradation of the fundamental electrical parameters (I-SC, Voc, FF and eta) of these thin film solar cells is shown. The impact of different proton energies on the damage coefficient is correlated with the in-depth scattering processes of protons within the device. The maximum damage is produced when the rest position of the protons is within the vicinity of the absorber bulk region.

引用

页码：1038 / 1041

页数：4