Optimized hole injection with strong electron acceptors at organic-metal interfaces

被引：242

作者：

Koch, N

Duhm, S

Rabe, JP

Vollmer, A

Johnson, RL

机构：

[1] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

[2] Berliner Elektronenspeicherring Gesell Synchrotro, D-12489 Berlin, Germany

[3] Univ Hamburg, Inst Expt Phys, D-22761 Hamburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.95.237601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The energy-level alignment at interfaces between three electroactive conjugated organic materials and Au was systematically varied by adjusting the precoverage of the metal substrate with the electron acceptor tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Photoelectron spectroscopy revealed that electron transfer from Au to adsorbed F4-TCNQ was responsible for lowering the hole-injection barrier by as much as 1.2 eV. This novel interface modification scheme is independent of the charge transfer complex formation ability of the organic materials with the electron acceptor.

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页数：4

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