Deposition of silicon dioxide films with an atmospheric-pressure plasma jet

被引：216

作者：

Babayan, SE

Jeong, JY

Tu, VJ

Park, J

Selwyn, GS

Hicks, RF ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA

[2] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 1998年 / 7卷 / 03期

关键词：

D O I：

10.1088/0963-0252/7/3/006

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 [等离子体物理]; 080103 [流体力学]; 080704 [流体机械及工程];

摘要：

A plasma jet has been developed which deposits silica films at up to 3000 Angstrom min(-1) at 760 Torr and 115 to 350 degrees C. The jet operates by feeding oxygen and helium gas between two coaxial electrodes that are driven by a 13.56 MHz radio frequency source at 40 to 500 W. Tetraethoxysilane is mixed with the effluent of the plasma jet and directed onto a substrate located 1.7 cm downstream. The properties of the silica films, as determined by infrared spectroscopy and capacitance measurements, are comparable to those of thermally grown silicon dioxide films at 900 degrees C.

引用

页码：286 / 288

页数：3

共 23 条

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EFFECT OF OH- ON LOW-FREQUENCY DIELECTRIC-CONSTANT OF VITREOUS SILICA [J].