Hall resistivity and dephasing in the quantum Hall insulator

被引:44
作者
Pryadko, LP [1 ]
Auerbach, A
机构
[1] Univ Calif Los Angeles, Dept Phys, Los Angeles, CA 90095 USA
[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[3] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
关键词
D O I
10.1103/PhysRevLett.82.1253
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The long-standing problem of the Hall resistivity rho(xy) in the Hall insulator phase is addressed using four-lead Chalker-Coddington networks. Electron interaction effects are introduced via a finite dephasing length. In the quantum coherent regime, we find that rho(xy) scales with the longitudinal resistivity rho(xx), and they both diverge exponentially with the dephasing length. In the Ohmic limit (where the dephasing length is shorter than the Hall puddle size), rho(xy). remains quantized and independent of rho(xx). This suggests a new experimental probe for dephasing processes. [S0031-9007(99)08338-3].
引用
收藏
页码:1253 / 1256
页数:4
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