Controlled repeated chemical growth of ZnO films for dye-sensitized solar cells
被引:28
作者:
Mane, Rajararn S.
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机构:
Hanyang Univ, Dept Chem, Inorgan Nanomat Lab, Sundong Ku, Seoul 133791, South KoreaHanyang Univ, Dept Chem, Inorgan Nanomat Lab, Sundong Ku, Seoul 133791, South Korea
Mane, Rajararn S.
[1
]
Lee, Won-Joo
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机构:
Hanyang Univ, Dept Chem, Inorgan Nanomat Lab, Sundong Ku, Seoul 133791, South KoreaHanyang Univ, Dept Chem, Inorgan Nanomat Lab, Sundong Ku, Seoul 133791, South Korea
Lee, Won-Joo
[1
]
Lokhande, C. D.
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机构:
Hanyang Univ, Dept Chem, Inorgan Nanomat Lab, Sundong Ku, Seoul 133791, South KoreaHanyang Univ, Dept Chem, Inorgan Nanomat Lab, Sundong Ku, Seoul 133791, South Korea
Lokhande, C. D.
[1
]
Cho, Byung Won
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机构:
Korea Adv Inst Sci & Technol 39 1, Seoul 130650, South KoreaHanyang Univ, Dept Chem, Inorgan Nanomat Lab, Sundong Ku, Seoul 133791, South Korea
Cho, Byung Won
[2
]
Han, Sung-Hwan
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机构:
Hanyang Univ, Dept Chem, Inorgan Nanomat Lab, Sundong Ku, Seoul 133791, South KoreaHanyang Univ, Dept Chem, Inorgan Nanomat Lab, Sundong Ku, Seoul 133791, South Korea
Han, Sung-Hwan
[1
]
机构:
[1] Hanyang Univ, Dept Chem, Inorgan Nanomat Lab, Sundong Ku, Seoul 133791, South Korea
[2] Korea Adv Inst Sci & Technol 39 1, Seoul 130650, South Korea
ZnO;
structural and surface morphology;
chemical growth;
dye-sensitized solar cells;
D O I:
10.1016/j.cap.2007.10.001
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The controlled growth of ZnO nanorods perpendicular to substrate surface i.e. c-axis by a repeated chemical deposition method for efficient dye-sensitized solar cell application is described. X-ray diffraction study shows the wurtzite structure of ZnO with high crystallinity. Intensity and newly evolved peaks of the ZnO are found to be thickness dependent. Dye loving flower-like globular architecture of ZnO is observed after 8 mu m thickness. Dye-sensitized solar cell studies show the solar-to-electrical conversion efficiency of 2.21% for 11 mu m ZnO electrode when illuminated with 80 mW/cm(2). (C) 2007 Elsevier B.V. All rights reserved.
机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Chen, SJ
;
Liu, YC
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NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R ChinaNE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Liu, YC
;
Shao, CL
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Shao, CL
;
Mu, R
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Mu, R
;
Lu, YM
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Lu, YM
;
Zhang, JY
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Zhang, JY
;
Shen, DZ
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Shen, DZ
;
Fan, XW
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Chen, SJ
;
Liu, YC
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机构:
NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R ChinaNE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Liu, YC
;
Shao, CL
论文数: 0引用数: 0
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Shao, CL
;
Mu, R
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Mu, R
;
Lu, YM
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Lu, YM
;
Zhang, JY
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Zhang, JY
;
Shen, DZ
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Shen, DZ
;
Fan, XW
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China