Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage

被引：14

作者：

Fukano, H

Kozen, A

Kato, K

Nakajima, O

机构：

[1] NTT Optoelectronics Laboratories, Wakamiya, Atsugi, Kanagawa 243-01

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 25期

关键词：

photodiodes; planar lightwave circuits;

D O I：

10.1049/el:19961590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors propose a novel edge-illuminated refracting-facet photodiode (RFPD), where the incident light parallel to the upside surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5 mu m show a responsivity as high as 0.96 A/W even at a bias voltage of 0.5 V for a flat-ended singlemode fibre.

引用

页码：2346 / 2348

页数：3