High aspect ratio nano-oxidation of silicon with noncontact atomic force microscopy

被引：10

作者：

Clement, N ^{[1
]}

Tonneau, D

Gely, B

Dallaporta, H

Safarov, V

Gautier, J

机构：

[1] Fac Sci Luminy, GPEC, F-13288 Marseille 9, France

[2] CEA, DRT, LETI, DTS, F-38054 Grenoble, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 06期

关键词：

D O I：

10.1116/1.1620513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the formation of high aspect ratio similar to0.3 (height/width) oxide features with noncontact mode atomic force microscopy assisted lithography. The process requires high humidity levels, series of short pulses <100 ns, high voltage level >25 V, a tip oscillation amplitude similar to20 nm, and feedback "on." We also show that the application of a voltage at magnitude higher than a certain limit damages the surface. (C) 2003 American Vacuum Society.

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页码：2348 / 2351

页数：4

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