Anisotropic enhancement of flux pinning in Y-Ba-Cu-O thin films grown by the step-flow growth mode

被引：4

作者：

Habermeier, HU ^{[1
]}

Haage, T ^{[1
]}

Zegenhagen, J ^{[1
]}

Hadjev, VG ^{[1
]}

Warthmann, R ^{[1
]}

Jooss, C ^{[1
]}

机构：

[1] MPI Festkorperforsch, D-70569 Stuttgart, Germany

来源：

SUPERCONDUCTING AND RELATED OXIDES: PHYSICS AND NANOENGINEERING III | 1998年 / 3481卷

关键词：

YBCO thin films; critical current; step-flow growth; Raman scattering; fluctuation conductivity;

D O I：

10.1117/12.335877

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

YBa2Cu3O7-x ( YBCO) thin films have been grown on vicinal cut SrTiO3 ( 001) single crystals. The films show a pronounced anisotropic resistivity and flux pinning properties in the substrate plane. UHV scanning tunneling microscopy and transmission electron microscopy have been used to investigate the substrate surface, film morphology and the growth induced defect structure. The anisotropy is caused by planar defects generated via self-organization of the YBCO which lead to an exceptionally large critical current density up to 8x10(11) A/m(2) at 4.2K, The films are partially detwinned as a consequence of the modification of the growth mode by the terrace-type surface morphology due to the vicinal cut of the substrates.

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收藏

页码：204 / 213

页数：10

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