Multiferroic materials for spin-based logic devices

被引:10
作者
de Sousa, Rogerio [1 ]
Moore, Joel E. [1 ,2 ]
机构
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
logical devices; multiferroic magnetoelectrics; spin-wave injection; Landau theory;
D O I
10.1166/jno.2008.008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Logical devices based on spin waves offer the potential to avoid dissipation mechanisms that limit devices based on either the charge or spin of mobile electrons. Multiferroic magnetoelectrics, which are materials that combine ferroelectric and magnetic order, allow direct switching of magnetic order and thence of spin-wave properties using an applied electric field. The intrinsic coupling between polarization and magnetic moments, generated by strong electronic correlations in these multiferroic materials, is argued to provide new approaches to spin-wave injection and spin-wave switching using applied voltages with no external magnetic field. These effects are shown to arise in a phenomenological Landau theory of coupled electronic and magnetic orders in multiferroic BiFeO(3), and found to depend subtly on differences between the crystalline and film states of this material.
引用
收藏
页码:77 / 81
页数:5
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