Deposition of SiOx diffusion barriers on flexible packaging materials by PECVD

被引：81

作者：

Bieder, A ^{[1
]}

Gruniger, A ^{[1
]}

von Rohr, PR ^{[1
]}

机构：

[1] ETH, Inst Proc Engn, CH-8092 Zurich, Switzerland

来源：

SURFACE & COATINGS TECHNOLOGY | 2005年 / 200卷 / 1-4期

关键词：

silicon oxide; diffusion barrier; PECVD; water vapor permeability; RF mode; dual mode; COATINGS; PERMEATION; TRANSPORT; OXYGEN; FILMS;

D O I：

10.1016/j.surfcoat.2005.02.004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This study focuses on the water vapor permeability of plasma enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) films. A batch reactor equipped with a 2.45 GHz slot antenna plasma source and a 13.56 MHz-biased substrate holder, was used to conduct the experiments. The remote microwave and the direct radio frequency plasma source can be operated separately or in dual mode. An oxygen plasma was generated and hexamethyldisiloxane (HMDSO) used as monomer. The SiO2-like films were deposited onto 12 mu m PET film. An increase of RF-power input, oxygen-to-monomer flow rate ratio, layer thickness or decrease of process pressure was found to enhance the gas barrier performance. Compared to uncoated PET films, a maximum reduction of more than a factor of 150 has been achieved for water vapor transmission rate. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：928 / 931

页数：4

共 14 条

[1]

[Anonymous], 2001, Plasmas Polym, DOI [10.1023/A:1011308919705, DOI 10.1023/A:1011308919705]

[2]

Doremus RobertH., 1994, GLASS SCI

[3] SiOx gas barrier coatings on polymer substrates:: Morphology and gas transport considerations [J].