Spray-deposited CuInSe2 nanocrystal photovoltaics

被引：125

作者：

Akhavan, Vahid A. ^{[1
,3
,4
]}

Goodfellow, Brian W. ^{[1
,3
,4
]}

Panthani, Matthew G. ^{[1
,3
,4
]}

Reid, Dariya K. ^{[1
]}

Hellebusch, Danny J. ^{[1
]}

Adachi, Takuji ^{[2
,3
,4
]}

Korgel, Brian A. ^{[1
,3
,4
]}

机构：

[1] Univ Texas Austin, Dept Chem Engn, Austin, TX 78712 USA

[2] Univ Texas Austin, Dept Chem, Austin, TX 78712 USA

[3] Univ Texas Austin, Texas Mat Inst, Austin, TX 78712 USA

[4] Univ Texas Austin, Ctr Nano & Mol Sci & Technol, Austin, TX 78712 USA

来源：

ENERGY & ENVIRONMENTAL SCIENCE | 2010年 / 3卷 / 10期

关键词：

CIGS SOLAR-CELLS; ELECTRONIC-PROPERTIES; FILMS; INKS;

D O I：

10.1039/c0ee00098a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Photovoltaic devices (PVs) were fabricated by spray-coating an ink of copper indium diselenide (CIS) nanocrystals as the light-absorbing layer. Without high-temperature post-deposition annealing, PVs were made on glass and plastic substrates with power conversion efficiencies of up to 1.9% and 1.1%, respectively, under AM 1.5 illumination. The mild processing conditions also enabled fabrication of alternative device structures that are not compatible with conventional high-temperature PV processing, including substrate and superstrate designs, and devices with transparent back contacts of conducting indium tin oxide (ITO) and plastic substrates. Device performance is observed to be limited by poor charge extraction from the nanocrystal films, with the highest efficiencies being obtained from PVs with relatively thin absorber layers. To improve light absorption without sacrificing internal quantum efficiency, stacked PVs were fabricated, which exhibited improved short-circuit current and power conversion efficiency compared to stand-alone single junction devices.

引用

页码：1600 / 1606

页数：7

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