Comparative study of silicon detectors

被引：27

作者：

Allier, CP ^{[1
]}

Valk, H ^{[1
]}

Huizenga, J ^{[1
]}

Bom, VR ^{[1
]}

Hollander, RW ^{[1
]}

van Eijk, CWE ^{[1
]}

机构：

[1] Delft Univ Technol, Interfac Reactor Inst, Radiat Technol Grp, NL-2629 JB Delft, Netherlands

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 03期

关键词：

D O I：

10.1109/23.682451

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied three different types of silicon sensors: PIN diodes, circular drift detectors, both made at the Delft University of Technology (DUT), and Hamamatsu S5345 avalanche photodiodes. Measurements have been carried out in the same optimized experimental setup, both at room temperature and at low temperatures. Comparison is made for direct X-ray detection and CsI(Tl) scintillation light readout.

引用

页码：576 / 580

页数：5

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