Perylenediimide nanowires and their use in fabricating field-effect transistors and complementary inverters

被引：404

作者：

Briseno, Alejandro L. ^{[1
]}

Mannsfeld, Stefan C. B.

Reese, Colin

Hancock, Jessica M.

Xiong, Yujie

Jenekhe, Samson A.

Bao, Zhenan

Xia, Younan

机构：

[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA

[2] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

[3] Univ Washington, Dept Chem Engn, Seattle, WA 98195 USA

来源：

NANO LETTERS | 2007年 / 7卷 / 09期

关键词：

D O I：

10.1021/nl071495u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Perylenetetracarboxyldiimide (PTCDI) nanowires self-assembled from commercially available materials are demonstrated as the n-channel semiconductor in organic field-effect transistors (OFETs) and as a building block in high-performance complementary inverters. Devices based on a network of PTCDI nanowires have electron mobilities and current on/off ratios on the order of 10(-2) cm(2/)Vs and 10(4), respectively. Complementary inverters based on n-channel PTCDI nanowire transistors and p-channel hexathiapentacene (HTP) nanowire OFETs achieved gains as high as 8. These results demonstrate the first example of the use of one-dimensional organic semiconductors in complementary inverters.

引用

页码：2847 / 2853

页数：7

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