Electrical and physical characterization of high-k dielectric layers

被引：10

作者：

Houssa, M ^{[1
]}

Naili, M ^{[1
]}

Afanas'ev, VV ^{[1
]}

Heyns, MM ^{[1
]}

Stesmans, A ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Dept Phys, B-3001 Leuven, Belgium

来源：

2001 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

10.1109/VTSA.2001.934518

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The electrical properties of MOS capacitors with thin high permittivity ZrO2 gate stacks were investigated. The frequency dispersion in the capacitance voltage characteristics, polarity dependence of the current through the gate stack and the generation of traps during constant gate voltage stress of capacitors were studied. The thickness of the SiON interfacial layers and high permittivity layer was measured using transmission electron microscopy (TEM). The results show that the current voltage characteristics of MOS capacitors are polarity dependent.

引用

页码：196 / 199

页数：4

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