Shape and dielectric mismatch effects in semiconductor quantum dots

被引:64
作者
Bolcatto, PG [1 ]
Proetto, CR
机构
[1] Comis Nacl Energia Atom, Ctr Atom Bariloche, RA-8400 Bariloche, Rio Negro, Argentina
[2] Inst Balseiro, RA-8400 Bariloche, Rio Negro, Argentina
[3] UNL, Fac Formac Docente Ciencias, RA-3000 Santa Fe, Argentina
[4] UNL, Fac Ingn Quim, RA-3000 Santa Fe, Argentina
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 19期
关键词
D O I
10.1103/PhysRevB.59.12487
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The combined effect of shape and dielectric mismatch between dot and matrix on several electronic properties of semiconductor quantum dots have been studied. In particular, the electronic properties of spherical and cubic quantum dots that have been analyzed are the integrated density of states, the polarization self-energy corrections to single-particle energies, the doping with impurities: excitonic Coulomb energies, and Coulomb blockade energies. It has been found that, in spite of the highly nonhomogeneous polarized charge density induced at the boundaries of the cubic quantum dot, the electronic properties are essentially independent on the dot shape for all the range of dielectric mismatch. [S0163-1829(99)00119-8].
引用
收藏
页码:12487 / 12498
页数:12
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