Atomic arrangement at the AlN/SiC interface

被引：64

作者：

Ponce, FA

Van de Walle, CG

Northrup, JE

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.53.7473

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The lattice structure of the AlN/SiC interface has been studied in cross section by high-resolution transmission-electron microscopy. Lattice images show planar and crystallographically abrupt interfaces. The atomic arrangement at the plane of the interface is analyzed based on the image characteristics. Possible bonding configurations are discussed. Variations in local image contrast and interplanar separations are used to identify atomic bonding configurations consistent with the lattice images.

引用

页码：7473 / 7478

页数：6

共 14 条

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