Domain-wall mechanism of "(n√3 x n√3)R30°" incommensurate structure formation in chemisorbed halogen layers on Cu(111)

被引:27
作者
Andryushechkin, BV [1 ]
Eltsov, KN [1 ]
Shevlyuga, VM [1 ]
机构
[1] Russian Acad Sci, Inst Gen Phys, Ctr Nat Sci, Moscow 117942, Russia
关键词
low energy electron diffraction (LEED); scanning tunneling microscopy; chemisorption; surface structure; morphology; roughness; and topography; chlorine; iodine; copper; halides;
D O I
10.1016/S0039-6028(00)00896-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present a scanning tunneling microscopy study of incommensurate lattice formation in chemisorbed chlorine and iodine layers on Cu(1 1 1) under ultrahigh vacuum conditions. For halogen layers the transition from commensurate phase Cu(1 1 1)-(root3 x root3)R30 degrees -Hal to incommensurate one was found to pass through continuous development of striped domain walls separating the (root3 x root3)R30 degrees domains. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:L63 / L68
页数:6
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