Dopant compensation mechanism and leakage current in Pb(Zr-0.52,Ti-0.48) O-3 thin films

被引：23

作者：

Barlingay, CK

Dey, SK

机构：

[1] ARIZONA STATE UNIV,DEPT CHEM BIO & MAT ENGN,TEMPE,AZ 85287

[2] ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287

来源：

THIN SOLID FILMS | 1996年 / 272卷 / 01期

关键词：

niobium; transmission electron microscopy; titanium;

D O I：

10.1016/0040-6090(95)06983-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dopant compensation mechanism in 2-5 mol.% niobium (Nb)-doped Pb(Zr0.52Ti0.48) O-3 (PZT) thin films was studied to obtain single phase compositions. Transmission electron microscopy showed that the Nb-doped composition batched according to the Ti vacancy model, was single phase. This indicated that niobium donors were compensated by titanium vacancies at the B site. The beneficial effect of donors in single phase composition and detrimental effects of grain boundary second phases and accepters on the leakage currents are reported. The single-phase Nb-doped (5%) PZT thin film exhibited a low leakage current of 1 x 10(-7) A cm(-2) at 1.2 MV cm(-1).

引用

页码：112 / 115

页数：4

共 16 条

[1] POINT DEFECTS AND SINTERING OF LEAD ZIRCONATE-TITANATE [J].