Modifying the microstructure and morphology of film surface layers by manipulating chemical vapor deposition reactor conditions

被引:5
作者
Paritosh, F [1 ]
Srolovitz, DJ
机构
[1] Univ Michigan, Dept Chem Engn, Ann Arbor, MI 48109 USA
[2] Princeton Univ, Dept Mech & Aerosp Engn, Princeton, NJ 08544 USA
[3] Princeton Univ, Princeton Mat Inst, Princeton, NJ 08544 USA
关键词
D O I
10.1063/1.1360216
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two spatial dimension front tracking simulations have been performed to study the growth of polycrystalline, faceted films from randomly oriented nuclei. We present strategies to optimize the microstructure, morphology, and texture of thin films during chemical vapor deposition. In particular, we examine how changes in reactor conditions can be used to modify the mean grain size, surface roughness, crystallographic texture, and growth zones. Changing growth conditions once the target bulk film structure is established can be used to establish a thin surface region with much different structural characteristics. Analytical models are provided to aid in choosing the appropriate changes in reactor conditions and surface layer thickness to achieve optimal properties. (C) 2001 American Institute of Physics.
引用
收藏
页码:4857 / 4865
页数:9
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