Fine-structure N-polarity InN/InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy

被引：31

作者：

Che, SB

Terashima, W

Ishitani, Y

Yoshikawa, A

Matsuda, T

Ishii, H

Yoshida, S

机构：

[1] Chiba Univ, Ctr Frontier Elect & Photon, Dept Elect & Mech Engn, Inage Ku, Chiba 2638522, Japan

[2] Chiba Univ, JST, CREST Program, InN Project,Inage Ku, Chiba 2638522, Japan

[3] Furukawa Elect Corp Ltd, Yokohama R&D Labs, Nishi Ku, Yokohama, Kanagawa 2200073, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 26期

关键词：

D O I：

10.1063/1.1954877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have succeeded in the growth of very-fine-structure InN/InGaN (3-16 nm/9 nm) multi-quantum wells (MQWs) on GaN underlayer and characterized them by transmission electron microscopy (TEM), high-resolution x-ray diffraction (XRD), and photoluminescence (PL) at 13 K. Clear satellite diffraction peaks and sharp heterointerfaces were observed by XRD and TEM, respectively. A single PL-emission peak at 1.75 mu m was observed in the ten-periods InN(16.1 nm)/In0.67Ga0.33N(9.2 nm) MQWs. The use of the InGaN as a barrier layer instead of GaN resulted in remarkable reduction of lattice mismatch between the well and barrier, which was essential for the fabrication of MQWs with superior interface quality. This successful growth of fine-structure InN/InGaN MQWs would be an important step for the application of InN in optical communication devices.

引用

页码：1 / 3

页数：3

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