Dielectric properties of heterostructured BZT thin films prepared by sol-gel technique

In this work, we used the low loss and non-hygroscopic MgTiO3 (MT) for the fabrication of the Ba(Zr0.20Ti0.80)O-3:MgTiO3 (BZT:MT) heterostructured thin films by sol-gel processing. The dielectric properties of heterostructured thin films were characterized by measuring the dielectric constant and dielectric loss as a function of temperature, applied electric field and frequency. As a result, both MT and BZT remained as two distinct individual entities in the heterostructured thin films and a considerable reduction in the dielectric loss has been observed. The heterostructured thin films with lower dielectric constant and dielectric loss could be attractive materials for tunable microwave device. (c) 2008 Elsevier B.V. All rights reserved.