High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched to Ge substrates

被引：35

作者：

Takamoto, T ^{[1
]}

Agui, T ^{[1
]}

Ikeda, E ^{[1
]}

Kurita, H ^{[1
]}

机构：

[1] Japan Energy Corp, Cent R&D Lab, Toda, Saitama 3358502, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 66卷 / 1-4期

关键词：

tandem cell; Ge substrate; InGaAs; InGaP;

D O I：

10.1016/S0927-0248(00)00213-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Conversion efficiency (AM1.5G) of more than 30% was achieved by adding a small quantity of Indium into a GaAs bottom cell in the conventional tandem solar cell on Ge substrate. It was found that the lattice-mismatch between GaAs and Ge caused misfit-dislocations in thick GaAs layers and reduced an open-circuit voltage (V-oc) of the cell. An In0.49Ga0.51P/In0.01Ga0.99As tandem cell lattice-matched to Ge showed a great improvement in efficiency, which was attributed to an increase in the V-oc of the bottom cell and increases in the photocurrents both in the top and bottom cells due to reductions in band-gap energy. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：511 / 516

页数：6