Low Threshold Current Density InGaN Based 520-530nm Green Laser Diodes on Semi-Polar {20(2)over-bar1} Free-Standing GaN Substrates

被引:81
作者
Adachi, Masahiro [1 ]
Yoshizumi, Yusuke [1 ]
Enya, Yohei [1 ]
Kyono, Takashi [1 ]
Sumitomo, Takamichi [1 ]
Tokuyama, Shinji [1 ]
Takagi, Shinpei [1 ]
Sumiyoshi, Kazuhide [1 ]
Saga, Nobuhiro [1 ]
Ikegami, Takatoshi [1 ]
Ueno, Masaki [1 ]
Katayama, Koji [1 ]
Nakamura, Takao [1 ]
机构
[1] Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Konohana Ku, Osaka 5540022, Japan
关键词
D O I
10.1143/APEX.3.121001
中图分类号
O59 [应用物理学];
学科分类号
摘要
Green laser diodes (LDs) on the {20 (2) over bar1} plane exhibit lower threshold current densities, nearly half of those on the c-plane in the green region between 520-530 nm. The threshold current of a typical f{20 (2) over bar1} green LD lasing at 525.5 nm under room temperature cw operation is 51.1 mA, which corresponds to a threshold current density of 4.3 kA/cm(2). The threshold voltage is 6.38 V. The characteristics temperature T(0) is measured to be 175 K. The perpendicular theta(perpendicular to) and parallel theta(parallel to) beam divergence angles at half power of the {20 (2) over bar1} green LDs are 24 and 11 degrees, respectively. From the viewpoint of the device characteristics, especially the threshold current density, we conclude that the green LDs on the {20 (2) over bar1} plane GaN substrates have the essential advantage for obtaining efficient green LDs. (C) 2010 The Japan Society of Applied Physics
引用
收藏
页数:3
相关论文
共 25 条
[1]   True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power on c-Plane GaN [J].
Avramescu, Adrian ;
Lermer, Teresa ;
Mueller, Jens ;
Eichler, Christoph ;
Bruederl, Georg ;
Sabathil, Matthias ;
Lutgen, Stephan ;
Strauss, Uwe .
APPLIED PHYSICS EXPRESS, 2010, 3 (06)
[2]   531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20(2)over-bar1} Free-Standing GaN Substrates [J].
Enya, Yohei ;
Yoshizumi, Yusuke ;
Kyono, Takashi ;
Akita, Katsushi ;
Ueno, Masaki ;
Adachi, Masahiro ;
Sumitomo, Takamichi ;
Tokuyama, Shinji ;
Ikegami, Takatoshi ;
Katayama, Koji ;
Nakamura, Takao .
APPLIED PHYSICS EXPRESS, 2009, 2 (08)
[3]   Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20(2)over-bar1} GaN Substrates [J].
Funato, Mitsuru ;
Kaneta, Akio ;
Kawakami, Yoichi ;
Enya, Yohei ;
Nishizuka, Koji ;
Ueno, Masaki ;
Nakamura, Takao .
APPLIED PHYSICS EXPRESS, 2010, 3 (02)
[4]  
HASSE MA, 1993, APPL PHYS LETT, V63, P2315
[5]   Current status and future prospects of ZnSe-based light-emitting devices [J].
Itoh, S ;
Nakano, K ;
Ishibashi, A .
JOURNAL OF CRYSTAL GROWTH, 2000, 214 :1029-1034
[6]   545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density [J].
Kasai, Jun-ichi ;
Akimoto, Ryouichi ;
Kuwatsuka, Haruhiko ;
Hasama, Toshifumi ;
Ishikawa, Hiroshi ;
Fujisaki, Sumiko ;
Kikawa, Takeshi ;
Tanaka, Sigehisa ;
Tsuji, Shinji ;
Nakajima, Hiroshi ;
Tasai, Kunihiko ;
Takiguchi, Yoshiro ;
Asatsuma, Tsunenori ;
Tamamura, Koshi .
APPLIED PHYSICS EXPRESS, 2010, 3 (09)
[7]   Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (11(2)over-bar2) GaN substrate [J].
Kojima, K. ;
Funato, M. ;
Kawakami, Y. ;
Masui, S. ;
Nagahama, S. ;
Mukai, T. .
APPLIED PHYSICS LETTERS, 2007, 91 (25)
[8]   Optical gain spectra for near UV to aquamarine (Al,In) GaN laser diodes [J].
Kojima, K. ;
Schwarz, Ulrich T. ;
Funato, M. ;
Kawakami, Y. ;
Nagahama, S. ;
Mukai, T. .
OPTICS EXPRESS, 2007, 15 (12) :7730-7736
[9]  
KOJIMA K, 2008, THESIS KYOTO U KYOTO
[10]  
KOZAKI T, 2006, P SPIE, V6133