Analysis of porous oxide film growth on aluminum in phosphoric acid using re-anodizing technique

被引:41
作者
Vrublevsky, I
Parkoun, V
Schreckenbach, J
机构
[1] Belarusian State Univ Informat & Radioelect, Dept Microelect, Minsk 220013, BELARUS
[2] Tech Univ Chemnitz, Inst Chem, D-09107 Chemnitz, Germany
关键词
aluminum; porous alumina; electrical double layer; injecting junction; surface charge; re-anodizing;
D O I
10.1016/j.apsusc.2004.08.034
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effects of the anodizing voltage on the porous alumina film formation on Al foil in 4% phosphoric acid at 20 degrees C have been studied. The barrier layer thickness of porous films was determined by a re-anodizing technique. A digital voltmeter with a computer system was used to record the change in the anode potential with re-anodizing time. It was established that the change in the porous film growth mechanism occurred at 38 V in phosphoric acid. We explained this phenomenon by the surface charge of anodic oxide film and its dependence on the anodizing voltage in the electrolyte. It was shown that the surface charge of oxide film during anodizing in phosphoric acid to 38 V was negative. The charge was equal to zero at 38 V. Above 38 V, the surface of oxide film had a positive charge and this charge increased with the anodizing voltage. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:333 / 338
页数:6
相关论文
共 15 条
[1]   STUDY BY NUCLEAR MICROANALYSIS AND O-18 TRACER TECHNIQUES OF OXYGEN-TRANSPORT PROCESSES AND GROWTH LAWS FOR POROUS ANODIC OXIDE LAYERS ON ALUMINUM [J].
CHERKI, C ;
SIEJKA, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (06) :784-791
[2]   O18 STUDY OF SOURCE OF OXYGEN IN ANODIC OXIDATION OF SILICON AND TANTALUM IN SOME ORGANIC SOLVENTS [J].
CROSET, M ;
PETREANU, E ;
SAMUEL, D ;
AMSEL, G ;
NADAI, JP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :717-&
[3]   Nanostructured alumina as a cathode of organic light-emitting devices [J].
Kukhta, AV ;
Gorokh, GG ;
Kolesnik, EE ;
Mitkovets, AI ;
Taoubi, MI ;
Koshin, YA ;
Mozalev, AM .
SURFACE SCIENCE, 2002, 507 :593-597
[4]  
ONO S, 1993, KAKYNZOKU, V43, P447
[5]  
OSULLIVAN JP, 1978, P ROY SOC AM J, V42, P564
[6]  
Raij B., 1972, SOIL SCI SOC AM P, V36, P587
[7]   Highly ordered monocrystalline silver nanowire arrays [J].
Sauer, G ;
Brehm, G ;
Schneider, S ;
Nielsch, K ;
Wehrspohn, RB ;
Choi, J ;
Hofmeister, H ;
Gösele, U .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) :3243-3247
[8]   Formation of Al/(Ti, Nb, Ta)-composite oxide films on aluminum by pore filling [J].
Shikanai, M ;
Sakairi, M ;
Takahashi, H ;
Seo, M ;
Takahiro, K ;
Nagata, S ;
Yamaguchi, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (08) :2756-2766
[9]   O-18 STUDY OF FIELD-ASSISTED PORE FORMATION IN COMPACT ANODIC OXIDE-FILMS ON ALUMINUM [J].
SIEJKA, J ;
ORTEGA, C .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :883-891
[10]   DETERMINATION OF POROSITY OF ANODIC OXIDE-FILMS ON ALUMINUM BY PORE-FILLING METHOD [J].
TAKAHASHI, H ;
NAGAYAMA, M .
CORROSION SCIENCE, 1978, 18 (10) :911-&