Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å

被引：110

作者：

Sridhara, SG ^{[1
]}

Devaty, RP ^{[1
]}

Choyke, WJ ^{[1
]}

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 05期

关键词：

D O I：

10.1063/1.368403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the values of the absorption coefficient of 4H SiC at room temperature, in the wavelength range from 3900 to 3350 Angstrom and at 3250 Angstrom. By using the known shift in the band gap with temperature, we also present an estimate of the absorption coefficient of 4H SiC at 2 K. (C) 1998 American Institute of Physics. [S0021-8979(98)00217-5].

引用

页码：2963 / 2964

页数：2