The model of metal-insulator phase transition in vanadium oxide

被引：26

作者：

Vikhnin, VS ^{[1
]}

Lysenko, S ^{[1
]}

Rua, A ^{[1
]}

Fernandez, F ^{[1
]}

Liu, H ^{[1
]}

机构：

[1] Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USA

来源：

PHYSICS LETTERS A | 2005年 / 343卷 / 06期

关键词：

oxides; thin films; phase transitions; charge-density waves;

D O I：

10.1016/j.physleta.2005.05.094

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thermally induced metal-insulator phase transitions (PT) in VO2 thin films are studied theoretically and experimentally. The hysteresis phenomena in the region of the transition for different type thin films were investigated. The phenomenological model of the PT is suggested. The charge transfer-lattice instability in VO2 metallic phase is considered as basis of the first order metal-insulator PT in VO2. The charge transfer is treated as an order parameter. (c) 2005 Elsevier B.V. All rights reserved.

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收藏

页码：446 / 453

页数：8

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