Selective, deep Si trench etching with dimensional control

被引：8

作者：

Shul, RJ ^{[1
]}

Willison, CG ^{[1
]}

Zhang, L ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY IV | 1998年 / 3511卷

关键词：

high-aspect ratio silicon etching; inductively coupled plasma etching; aspect ratio dependent etching; dimensional control;

D O I：

10.1117/12.324308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The recent development of a high-aspect ratio Si etch (HARSE) process(1) has enabled the fabrication of a variety of Si structures where deep trench etching is necessary. The HARSE process relies on the formation of a sidewall etch inhibitor to prevent lateral etching of the Si structures during exposure to an aggressive SF6/Ar plasma etch chemistry. The process yields highly anisotropic profiles with excellent dimensional control for high aspect ratio features. In this study, Si etch rates and etch selectivities to photoresist are reported as a function of chamber pressure, cathode rf-power, ICP source power, and gas flow. Si etch rates > 3 mu m/min with etch selectivities to resist > 75:1 were obtained. Lateral dimensional control, etch selectivities to SiO2 and Si3N4, and aspect ratio dependent etching (ARDE) will also be discussed.

引用

页码：252 / 261

页数：10