Electric and thermal transient effects in high power optical devices

被引：41

作者：

Farkas, G ^{[1
]}

Haque, S ^{[1
]}

Wall, F ^{[1
]}

Martin, PS ^{[1
]}

Poppe, A ^{[1
]}

Vader, QVV ^{[1
]}

Bognár, G ^{[1
]}

机构：

[1] MicReD Ltd, H-1112 Budapest 6, Hungary

来源：

TWENTIETH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, PROCEEDINGS 2004 | 2004年

关键词：

structure function-based thermal modeling; thermal transient measurement; thermal and electro-thermal simulation; combined photometric/thermal measurement of power LEDs;

D O I：

10.1109/STHERM.2004.1291320

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

In case of opto-electronic devices the power applied on the device leaves in a parallel heat and light transport. For this reason the interpretation of R-th is not obvious. By studying electrical and thermal transients in high power LEDs this paper proposes a multi-domain "compact" model suitable for correct simulation of single devices as well as LED arrays in a board-level simulation environment. The thermal part of the model has been identified from structure functions extracted from measured thermal transients. Several measurements were carried out in a combined photometric/thermal measurement setup, which is proposed for the characterization of power LEDs. Transient simulation results compared to measured transients are also presented.

引用

页码：168 / 176

页数：9

共 6 条

[1] Dynamic compact models of cooling mounts for fast board level design [J].