Stability of the T-DNA flanking regions in transgenic Arabidopsis thaliana plants under influence of abiotic stress and cultivation practices

被引：11

作者：

Papazova, Nina ^{[1
]}

Ghedira, Rim ^{[1
,2
,3
]}

Van Glabeke, Sabine ^{[4
]}

Bartegi, Aghleb ^{[2
]}

Windels, Pieter ^{[1
]}

Taverniers, Isabel ^{[1
]}

Roldan-Ruiz, Isabel ^{[4
]}

Van Bockstaele, Erik ^{[4
,5
]}

Milcamps, Anne ^{[6
]}

Van den Eede, Guy ^{[6
]}

Depicker, Ann ^{[3
]}

De Loose, Marc ^{[1
]}

机构：

[1] Inst Agr & Fisheries Res, Unit Technol & Food, B-9820 Merelbeke, Belgium

[2] Inst Super Biotechnol, Unite Rech Biochim, Monastir 5000, Tunisia

[3] VIB, Dept Plant Syst Biol, B-9052 Ghent, Belgium

[4] Inst Agr & Fisheries Res, Unit Plant, B-9090 Melle, Belgium

[5] Univ Ghent, Fac Agr & Appl Biol Sci, Dept Plant Product, B-9000 Ghent, Belgium

[6] Commiss European Communities, Joint Res Ctr, Inst Hlth & Consumer Protect, I-21020 Ispra, VA, Italy

来源：

PLANT CELL REPORTS | 2008年 / 27卷 / 04期

关键词：

T-DNA flanking regions; single nucleotide polymorphisms (SNPs); T-DNA insertion; GMO; Arabidopsis thaliana;

D O I：

10.1007/s00299-007-0495-4

中图分类号：

Q94 [植物学];

学科分类号：

071001 ;

摘要：

Genetic transformation is often associated with different rearrangements of the plant genome at the site of insertion. Therefore the question remains weather these T-DNA insertion sites are more prone to genotoxic stresses. Here, we studied the impact of propagation through generations, the influence of gene stacking and of photo oxidative stress caused by high light intensity on the stability of the transgene flanking regions in the model plant Arabidopsis thaliana. Conformational Sensitive Capillary Electrophoresis (CSCE), RFLP and sequencing were deployed in this analysis in order to study the proximal 100 bp and the long-range T-DNA flanking sequences. By screening seven transgenic lines no evidence for occurrence of mutation events were found, implying that the nucleotide sequence of the T-DNA flanking regions of the studied events is unlikely to be unstable.

引用

页码：749 / 757

页数：9

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