Transport in strongly disordered multiwalled carbon nanotubes

被引：31

作者：

Tarkiainen, R ^{[1
]}

Ahlskog, M

Zyuzin, A

Hakonen, P

Paalanen, M

机构：

[1] Aalto Univ, Low Temp Lab, FIN-02015 Espoo, Finland

[2] AF Ioffe Phys Tech Inst, St Petersburg, Russia

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.69.033402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied magnetic field and temperature dependence of electron transport in chemical vapor deposition synthesized highly resistive multiwalled carbon nanotubes. The analysis of the weak-localization magnetoresistance according to electron-electron interaction theories leads to very small mean free paths, l<10 nm. At lowest temperatures the sheet resistance is near R-K=h/e(2). Both of these observations suggest that our samples are close to the strong-localization limit.

引用

页数：4

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