Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence

Imaging the band-to-band photoluminescence of silicon wafers is known to provide rapid and high-resolution images of the carrier lifetime. Here, we show that such photoluminescence images, taken before and after dissociation of iron-boron pairs, allow an accurate image of the interstitial iron concentration across a boron-doped p-type silicon wafer to be generated. Such iron images can be obtained more rapidly than with existing point-by-point iron mapping techniques. However, because the technique is best used at moderate illumination intensities, it is important to adopt a generalized analysis that takes account of different injection levels across a wafer. The technique has been verified via measurement of a deliberately contaminated single-crystal silicon wafer with a range of known iron concentrations. It has also been applied to directionally solidified ingot-grown multicrystalline silicon wafers made for solar cell production, which contain a detectible amount of unwanted iron. The iron images on these wafers reveal internal gettering of iron to grain boundaries and dislocated regions during ingot growth. (c) 2008 American Institute of Physics.