Nanoparticle deposition in hydrogenated amorphous silicon films during rf plasma deposition

被引：56

作者：

Tanenbaum, DM

Laracuente, AL

Gallagher, A

机构：

[1] NATL INST STAND & TECHNOL,JOINT INST LAB ASTROPHYS,BOULDER,CO 80309

[2] UNIV COLORADO,BOULDER,CO 80309

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 12期

关键词：

D O I：

10.1063/1.115912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Particles of 2-14 nm diameter, representing 10(-4)-10(-3) of the film volume, are observed by scanning tunneling microscopy (STM) in thin films of hydrogenated amorphous silicon (a-Si:H) grown by rf-plasma-enhanced deposition using optimized conditions. The particles are produced in the discharge and incorporated in the film during growth, in contradiction to expected particle trapping by discharge sheath fields. The interfaces between the nanoparticles and the homogeneous film can produce low-density regions that form electronic defects in a-Si:H films. (C) 1996 American Institute of Physics.

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页码：1705 / 1707

页数：3

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