Kink-free polycrystalline silicon double-gate elevated-channel thin-film transistors

被引：52

作者：

Kumar, A ^{[1
]}

Sin, JKO ^{[1
]}

Nguyen, CT ^{[1
]}

Ko, PK ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 12期

基金：

美国国家科学基金会;

关键词：

AMLCD; chemo-mechanical polishing; ECTFT; kink effect; polycrystalline silicon; TFT;

D O I：

10.1109/16.735729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charactcrization and analysis of a novel double-gate elevated-channel thin-film transistor (ECTFT) fabricated using polycrystalline silicon is reported. The transistor has thin channel and thick source/drain regions with a double-gate control. Using this structure, the kink effect in the I-V characteristics of a conventional TFT is completely eliminated, and leakage current at zero gate bias is reduced by over 15 times. The elimination of the kink effect and the significant reduction in leakage current are obtained due to the reduction in lateral electric field at the channel/drain junction region. Two-dimensional (2-D) device simulations are used to study the electric field reduction mechanism in the structure. Experimental results on the forward conduction and gate transfer characteristics of the structure will also be presented.

引用

页码：2514 / 2520

页数：7

共 18 条

[1] Optimizing polysilicon thin-film transistor performance with chemical-mechanical polishing and hydrogenation [J].