Effective temperature for hopping transport in a Gaussian DOS

被引:11
作者
Jansson, F. [1 ,2 ,3 ,4 ]
Baranovskii, S. D. [3 ,4 ]
Sliauzys, G. [1 ,2 ,5 ]
Osterbacka, R. [1 ,2 ]
Thomas, P. [3 ,4 ]
机构
[1] Abo Akad Univ, Dept Phys, Turku, Finland
[2] Abo Akad Univ, Funct Mat Ctr, Turku, Finland
[3] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[4] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
[5] Vilnius State Univ, Dept Solid State Elect, Vilnius, Lithuania
来源
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 3 | 2008年 / 5卷 / 03期
基金
芬兰科学院;
关键词
D O I
10.1002/pssc.200777567
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For hopping transport in disordered materials, the carrier mobility is strongly dependent on the temperature and electric field. For inorganic materials, with an exponential density of states (DOS), it has been shown earlier that both the energy distribution and the mobility of charge carriers can be described by an effective temperature T-eff (T, E) dependent on the magnitude of the electric field E. We attempt to apply the same ideas to hopping transport in organic materials with a Gaussian DOS. Solving numerically the balance equation for the hopping model we show that both the energy distribution and the mobility of charge carriers can be well described by a field-dependent effective temperature. We also show that the concept of the effective temperature is applicable to description of experimental data on the carrier mobility obtained in RRa-P3HT. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:722 / +
页数:2
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