The preparation of flat H-Si(111) surfaces in 40% NH4F revisited

被引：150

作者：

Allongue, P

de Villeneuve, CH

Morin, S

Boukherroub, R

Wayner, DDM

机构：

[1] Univ Paris 06, UPR 15 CNRS, F-75005 Paris, France

[2] Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada

来源：

ELECTROCHIMICA ACTA | 2000年 / 45卷 / 28期

关键词：

flat H-Si(111) surface; etching; mechanism; AFM;

D O I：

10.1016/S0013-4686(00)00610-1

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The reasons why ideally flat H-Si(111) surface call be prepared by NH4F etching are investigated from correlation between AFM observations and experimental conditions used for etching. It is shown that pitting may be completely suppressed if a one side polished wafer is immersed in an oxygen free solution. An analytical electrochemical study of the (111) and rough face of the same n-Si wafer is presented to yield insight into observations. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：4591 / 4598

页数：8

共 24 条

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