Evaluation of indium diffused M-i-n CdZnTe detectors

被引：6

作者：

Gagliardi, MA ^{[1
]}

Nenonen, S ^{[1
]}

Gagliardi, T ^{[1
]}

Aleksejeva, L ^{[1
]}

Ivanov, V ^{[1
]}

Bavdaz, M ^{[1
]}

机构：

[1] Metorex Int Oy, FIN-02631 Espoo, Finland

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the main electronic noise sources of a room temperature spectroscopy system is the leakage current of a detector. It can be reduced with a pn-junction type detector structure such as a M-i-n configuration, and with cooling. In this work eight CdZnTe detectors with a M-i-n structure were fabricated by indium diffusion. The junction was characterized by a current-voltage technique. Detector electrical, charge collection and spectroscopic properties were compared to the ones received with the traditional electroless Au contacts, before the junction formation. As a result of the indium diffusion an improved detector leakage current performance was achieved. However, a corresponding improvement in the detector energy resolution was not always observed due to the CdZnTe charge collection properties and process variables.

引用

页码：165 / 170

页数：6