Muonium in semiconductors and some implications for hydrogen impurities

被引：15

作者：

Estle, TL ^{[1
]}

Lichti, RL ^{[1
]}

机构：

[1] TEXAS TECH UNIV, DEPT PHYS, LUBBOCK, TX 79409 USA

来源：

HYPERFINE INTERACTIONS | 1996年 / 97-8卷 / 1-4期

关键词：

D O I：

10.1007/BF02150174

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

A description of the structures, charge states, and the transitions among them for isolated interstitial muonium in covalent semiconductors is presented. This description appears to be general, explaining a wealth of experimental observations on group IV and III-V semiconductors. Observations which support various features of this general description will be presented. A brief mention of some implications for hydrogen in semiconductors will follow.

引用

页码：171 / 192

页数：22

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