On the relationship between Schottky barrier capacitance and mixer performance at cryogenic temperatures

被引:2
作者
Romanofsky, RR
机构
[1] NASA Lewis Research Center, Cleveland
来源
IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1996年 / 6卷 / 08期
关键词
D O I
10.1109/75.508555
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The flat-hand voltage is the Schottky junction voltage required to shrink the depletion width to zero, At cryogenic temperatures, mixer diodes are generally biased and/or pumped beyond the Rat-hand condition to minimize conversion loss and noise figure, This occurs despite the presumed sharp increase in junction capacitance near flat-band, which should instead limit mixer performance. Past moderate forward bias, the diode C-V relationship is difficult to measure, A simple analytic expression for C(V) is usually used to model and predict mixer performance, This letter provides experimental data on C(V) at 77 K based on a microwave measurement and modeling technique, Data is also provided on the conversion loss of a singly balanced mixer optimized for 77 K operation, The connection between junction capacitance, flat-hand potential, and conversion loss is examined. It is shown that the analytic expression greatly overestimates the junction capacitance that occurs as flat-band is approached.
引用
收藏
页码:286 / 288
页数:3
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