Oxidation behaviour of Ni nanoparticles and formation process of hollow NiO

被引:117
作者
Nakamura, R. [1 ]
Lee, J. -G. [2 ]
Mori, H. [3 ]
Nakajima, H. [1 ]
机构
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[2] Korea Inst Mat Sci, Chang Won 641831, South Korea
[3] Osaka Univ, Res Ctr Ultra High Voltage Electron Microscopy, Osaka 5670047, Japan
关键词
D O I
10.1080/14786430701819203
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The oxidation behaviour of Ni nanoparticles at temperatures from 573 to 673 K and the formation process of hollow oxide particles were studied by transmission electron microscopy. In the course of oxidation, a single large void was observed at one site of the interface between inner Ni and outer NiO layer due to vacancy clustering, which occurs during the oxidation process resulting from the rapid outward diffusion of Ni ions through the NiO layer. This suggests that supersaturated vacancies generated at the interface migrate to the site over a long-range distance and aggregate at the site. Ni nanoparticles were fully oxidized to become hollow NiO, in which nano-holes in the form of vacancy clusters were located at the off-centred positions. The de-centring of the voids in hollow NiO is probably due to the large mobility of vacancies inside Ni during oxidation.
引用
收藏
页码:257 / 264
页数:8
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