Crystallization of amorphous In2O3-10 wt % ZnO thin films annealed in air -: art. no. 261908

被引：70

作者：

Yaglioglu, B ^{[1
]}

Yeom, HY ^{[1
]}

Paine, DC ^{[1
]}

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 26期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1977209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the crystallization of amorphous indium zinc oxide (a-IZO) with stoichiometry of In2Zn0.38O3.38 (In2O3-10 wt % ZnO) thin films deposited by dc magnetron sputtering. Transmission electron microscopy and glancing incidence x-ray diffraction were used to show that, when annealed in air at 500 degrees C, the product of a-IZO thin film crystallization is a compositionally modulated crystal of high-pressure corundum In2O3 phase. The composition, microstructure, resistivity, carrier density, and mobility of this new IZO phase are reported and are compared to the bixbyite ITO (In2O3-9.8 wt % SnO2) deposited and annealed under identical conditions.

引用

页码：1 / 3

页数：3

共 7 条

[1]

BELLINGHAM JR, 1990, J PHYS-CONDENS MAT, V2, P6201

[2]

BURSECK PR, 1983, AM MINERAL, V68, P18

[3] Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film [J].