Epitaxial oxide growth on polar (111) surfaces

被引:43
作者
Blok, J. L.
Wan, X.
Koster, G. [1 ]
Blank, D. H. A.
Rijnders, G.
机构
[1] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands
关键词
aluminium compounds; bismuth compounds; buffer layers; calcium compounds; epitaxial growth; lanthanum compounds; reflection high energy electron diffraction; ruthenium compounds; strontium compounds; transmission electron microscopy; BIFEO3; THIN-FILMS;
D O I
10.1063/1.3652701
中图分类号
O59 [应用物理学];
学科分类号
摘要
Obtaining-atomically smooth surfaces and interfaces of perovskite oxide materials on polar (111) surfaces presents a particular challenge as these surfaces and interfaces will reconstruct. Here, the effect of the use of screening buffer layers on the epitaxial growth on such polar surfaces is investigated. Both transmission electron microscopy and in situ reflective high energy electron diffraction data imply that the buffer layers, SrRuO(3) or LaAlO(3), restore a near bulk-like termination at growth temperature, allowing for coherent growth of BiFeO(3) and CaTiO(3) for all deposited unit cell layers of the film material. (C) 2011 American Institute of Physics. [doi:10.1063/1.3652701]
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页数:3
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