Optical characterization of Er-implanted ZnO films formed by sol-gel method

被引：24

作者：

Fukudome, T ^{[1
]}

Kaminaka, A ^{[1
]}

Isshiki, H ^{[1
]}

Saito, R ^{[1
]}

Yugo, S ^{[1
]}

Kimura, T ^{[1
]}

机构：

[1] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828585, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 206卷

关键词：

ZnO; Er; sol-gel; implantation; photoluminescence;

D O I：

10.1016/S0168-583X(03)00746-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this paper, we report on the 1.54 mum photoluminescence (PL) of Er-implanted ZnO thin films formed by a sol-gel method on Si substrates. In spite of the polycrystalline structure of the sol-gel ZnO thin films, they showed strong PL emissions due to the near band edge recombination at 375 nm as well as the Er-related luminescence at 1.54 mum. The Er-related luminescence showed no decrease (quench) in the intensity up to the Er concentration of 1.5 x 10(21) cm(-3). The PL intensity of Er-implanted ZnO at 1.54 mum was found to be as strong as Er-doped PS (porous Si) at 20 K, and the intensity reduced to 1/3 at room temperature. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：287 / 290

页数：4

共 3 条

[1] Local structure analysis of an optically active center in Er-doped ZnO thin film [J].

Ishii, M ;

Komuro, S ;

Morikawa, T ;

Aoyagi, Y .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) :3679-3684

[2] Highly erbium-doped zinc-oxide thin film prepared by laser ablation and its 1.54 μm emission dynamics [J].

Komuro, S ;

Katsumata, T ;

Morikawa, T ;

Zhao, XW ;

Isshiki, H ;

Aoyagi, Y .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (12) :7129-7136

[3] Erbium implanted thin film photonic materials [J].

Polman, A .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) :1-39

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