A power amplifier with efficiency improved using defected ground structure

被引：91

作者：

Lim, JS ^{[1
]}

Kim, HS

Park, JS

Ahn, D

Nam, S

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Appl Electromagnet Lab, Inst New Media & Commun, Seoul 151742, South Korea

[2] Soonchunhyang Univ, Div Informat Technol Engn, Chungnam, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2001年 / 11卷 / 04期

关键词：

defected ground structure; harmonic tuned power amplifiers; harmonic tuning; power amplifiers;

D O I：

10.1109/7260.916333

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports the effects of defected ground structure (DGS) on the output power and efficiency of a class A power amplifier, In order to evaluate the effects of DGS on the efficiency and output power, two class A GaAs FET amplifiers have been measured at 4.3 similar to4.7 GHz. One of them has a 50 Omega microstrip line with DGS at the output section, while the other has only 50 Omega straight line. It is shown that DGS rejects the second harmonic at the output and yields improved output power and power added efficiency by 1 similar to5%.

引用

页码：170 / 172

页数：3

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