The effect of plasma damage and different annealing ambients on the generation of latent interface states

被引：7

作者：

Creusen, M ^{[1
]}

Lee, HC ^{[1
]}

Vanhaelemeersch, S ^{[1
]}

Groeseneken, G ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 1998年

关键词：

D O I：

10.1109/PPID.1998.725613

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

p-MOSFETs stressed by (simulated) plasma induced charging were thermally annealed for 20 min at 400 degrees C in different annealing ambients. After the anneal the devices were stressed again to reveal latent plasma damage. The charge pumping technique was used to detect interface state generation and charge trapping in the bulk of the oxide. It was found that the plasma stressed interface states are totally annealed by the thermal treatment. However, the interface state generation during the subsequent stress exceeds that of fresh devices. Changing the annealing ambient from forming gas to nitrogen lowers the post-anneal interface states generation rate significantly. Also the correlation between the plasma charging level and the measured interface state generation has been studied. Although for thick gate oxides a consistent correlation can be observed, for thinner gate oxides this consistency disappears.

引用

页码：217 / 220

页数：4