Polarity of GaN

被引：9

作者：

Liliental-Weber, Z ^{[1
]}

Benamara, M ^{[1
]}

Richter, O ^{[1
]}

Swider, W ^{[1
]}

Washburn, J ^{[1
]}

Grzegory, I ^{[1
]}

Porowski, S ^{[1
]}

Yang, JW ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE | 1998年 / 512卷

关键词：

D O I：

10.1557/PROC-512-363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Convergent beam electron diffraction (CBED) was applied to study polarity of GaN heterolayers grown by MOCVD on sapphire and SiC substrates and also mechano-chemically polished bulk GaN platelet crystals grown from Ga melt under hydrostatic pressure of N. Heterolayers of GaN grown on both types of substrates showed (0001) Ga polarity, e.g. Ga to N along c-axis. Mechano-chemical etching of bulk GaN platelet crystals leaves one surface smooth and the opposite surface rough with visible damage caused by mechanical polishing. CBED studies showed that the smooth surface has (000 (1) over bar) N polarity, confirming our earlier studies.

引用

页码：363 / 368

页数：6