Properties of CuxS thin film based structures:: influence on the sensitivity to ammonia at room temperatures

被引:124
作者
Setkus, A
Galdikas, A
Mironas, A
Simkiene, I
Ancutiene, I
Janickis, V
Kaciulis, S
Mattogno, G
Ingo, GM
机构
[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania
[2] Kaunas Univ Technol, LT-3006 Kaunas, Lithuania
[3] CNR, Ist Chim Mat, I-00016 Monterotondo, RM, Italy
关键词
copper sulfide; gas sensors; thin films; surface properties;
D O I
10.1016/S0040-6090(01)00995-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Surface and electrical properties of thin CuxS films grown on different substrates (polyethylene and micro-porous-Si layer) sensitive to ammonia at room temperature are investigated. The resistance response to ammonia is measured in the CuxS in air with relative humidity from 15 to 100% at temperatures from 290 to 350 K. The surface chemical composition and the morphology are analysed. A honeycombed construction of the CuxS films deposited on a micro-porous Si-layer and proportions between components in the chemical composition are found to correlate with the higher sensitivity to ammonia in air at room temperature. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:275 / 281
页数:7
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