Stabilization of ferromagnetic states by electron doping in Fe-, Co- or Ni-doped ZnO

被引:478
作者
Sato, K [1 ]
Katayama-Yoshida, H [1 ]
机构
[1] Osaka Univ, Inst Sci & Ind Res, Dept Condensed Matter Phys, Osaka 5670047, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 4A期
关键词
ab initio calculation; zinc oxide; diluted magnetic semiconductor; carrier-induced ferromagnetism; material design; electron doping;
D O I
10.1143/JJAP.40.L334
中图分类号
O59 [应用物理学];
学科分类号
摘要
Detailed guidelines for controlling magnetic states in ZnO-based diluted magnetic semiconductors are given based on ab initio electronic structure calculations within the local spin density approximation using the Korringa-Kohn-Rostoker method. Effects of disorder were taken into account by the coherent potential approximation. It was found that the ferromagnetic state was stabilized by electron doping in the case of Fe, Co- or Ni-doped ZnO. From the view point of practical applications, it is possible to realize a high-Curie-temperature ferromagnet, because n-type ZnO is easily available.
引用
收藏
页码:L334 / L336
页数:3
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